any changing of specification will not be informed individual pzt 4401 npn transistor epitaxial planar transistor r o h s c o m p l i a n t p r o d u c t h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e t h e p z t 4 4 0 1 i s d e s i g n e d f o r g e n e r a l p u r p o s e s w i t c h i n g a n d a m p l i f i e r a p p l i c a t i o n s . 4 4 0 d e s c r i p t i o n d a t e c o d e b c e 1 f e a t u r e s * h i g h p o w e r d i s s i p a t i o n : 1 5 0 0 m w a t 2 5 c o * h i g h d c c u r r e n t g a i n : 1 0 0 ~ 3 0 0 a t 1 5 0 m a * c o m p l e m e n t a r y t o p z t 4 4 0 3 e l e c t r i c a l c h a r a c t e r i s t i c s t a m b = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d p a r a m e t e r s y m b o l m i n t y p . m a x u n i t e s t c o n d i t i o n s c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e b v c b o - - v i c = 1 0 0 m a i c = 1 m a i e = 1 0 m a v c e = 3 5 v , v b e = 0 . 4 v i c = v c e = v , i c = v c e = v , i c = 2 0 m a , f = 1 0 0 m h z v c b = 5 , f = 1 m h z * b v c e o 4 0 - - v b v e b o - - v i c e s - - 1 0 0 n a - - * v c e ( s a t ) 1 - * h f e 1 3 0 0 * h f e 2 f t - m h c o b - p f z c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e e m i t t e r - b a s e b r e a k d o w n v o l t a g e c o l l e c t o r - b a s e c u t o f f c u r r e n t c o l l e c t o r s a t u r a t i o n v o l t a g e d c c u r r e n t g a i n g a i n - b a n d w i d t h p r o d u c t o u t p u t c a p a c i t a n c e t 6 0 5 4 0 7 5 0 8 0 9 5 0 1 . 2 4 0 0 m v 1 5 0 m a , i b = 1 5 m a 1 0 . 1 m a v c e = v , i c = 1 1 m a 1 0 v c - 7 5 0 2 0 1 0 0 - 4 0 2 5 0 6 . 5 - * p u l s e w i d t h 3 8 0 s , d u t y c y c l e 2 % ?? ?? m - - * v c e ( s a t ) 2 b a s e s a t r u a t i o n v o l t a g e * v b e ( s a t ) 1 * v b e ( s a t ) 2 * h f e 3 * h f e 4 * h f e 5 m v m v v - - - - - - - - - - i c = 5 0 0 m a , i b = 5 0 m a i c = 1 5 0 m a , i b = 1 5 m a i c = 5 0 0 m a , i b = 5 0 m a v c e = v , i c = 1 1 0 m a v c e = v , i c = 1 1 5 0 m a v c e = v , i c = 2 5 0 0 m a c l a s s i f i c a t i o n o f h f e 4 o m a x i m u m r a t i n g s s y m b o l p a r a m e t e r v a l u e c o l l e c t o r c u r r e n t ( c o n t i n o u s ) 5 1 . 5 5 5 ~ + 1 5 0 4 0 6 0 6 0 0 i c t s t g t j , j u n c t i o n a n d t o t a l p o w e r d i s s i p a t i o n v e b o p d e m i t t e r - b a s e v o l t a g e v m a w s t o r a g e t e m p e r a t u r e - c o v c e o c o l l e c t o r - e m i t t e r v o l t a g e v v c b o c o l l e c t o r - b a s e v o l t a g e v u n i t s a b s o l u t e t a = 2 5 c o r a n k q r 1 0 0 ~ 2 1 0 1 9 0 ~ 3 0 0 r a n g e 5 1 . 4 0 1 . 8 0 m i llimeter m i llimeter sot-223 0 1 - j u n - 2 0 0 2 r e v . a page 1 of 2 ref. min. max. ref. min. max. a 6.70 7.30 b 13 c typ. c 2.90 3.10 j 2.30 ref. d 0.02 0.10 1 6.30 6.70 e 0 c 10 c 2 6.30 6.70 i 0.60 0.80 3 3.30 3.70 h 0.25 0.35 4 3.30 3.70
c h a r a c t e r i s t i c s c u r v e pzt 4401 np n transistor epitaxial planar transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 2 of 2
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